SSM3310GH Datasheet and Replacement
Type Designator: SSM3310GH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-252
SSM3310GH substitution
SSM3310GH Datasheet (PDF)
ssm3310gh ssm3310gj.pdf

SSM3310GH,JP-channel Enhancement-mode Power MOSFET2.5V low gate drive capability BV -20VDSSDSimple drive requirement R 150mDS(ON)Fast switching ID -10AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM3310GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor use in low voltage b
Datasheet: SSM25T03GH , SSM25T03GJ , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , SSM2761P-A , IRFZ48N , SSM3310GJ , SSM3J331R , SSM3J338R , SSM3K2615R , SSM3K318R , SSM3K324R , SSM3K335R , SSM3K336R .
History: MTN7002ZHS3 | PMV30ENEA | DH100P30CD | PK502BA | CS5N100VF | AON7442 | FQT5P10TF
Keywords - SSM3310GH MOSFET datasheet
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History: MTN7002ZHS3 | PMV30ENEA | DH100P30CD | PK502BA | CS5N100VF | AON7442 | FQT5P10TF



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