All MOSFET. SSM3310GH Datasheet

 

SSM3310GH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3310GH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-252

 SSM3310GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3310GH Datasheet (PDF)

 ..1. Size:421K  silicon standard
 ssm3310gh ssm3310gj.pdf

SSM3310GH SSM3310GH

SSM3310GH,JP-channel Enhancement-mode Power MOSFET2.5V low gate drive capability BV -20VDSSDSimple drive requirement R 150mDS(ON)Fast switching ID -10AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM3310GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor use in low voltage b

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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