All MOSFET. SSM3310GJ Datasheet

 

SSM3310GJ Datasheet and Replacement


   Type Designator: SSM3310GJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-251
 

 SSM3310GJ substitution

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SSM3310GJ Datasheet (PDF)

 ..1. Size:421K  silicon standard
 ssm3310gh ssm3310gj.pdf pdf_icon

SSM3310GJ

SSM3310GH,JP-channel Enhancement-mode Power MOSFET2.5V low gate drive capability BV -20VDSSDSimple drive requirement R 150mDS(ON)Fast switching ID -10AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM3310GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor use in low voltage b

Datasheet: SSM25T03GJ , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY , SSM2761P-A , SSM3310GH , NCEP15T14 , SSM3J331R , SSM3J338R , SSM3K2615R , SSM3K318R , SSM3K324R , SSM3K335R , SSM3K336R , SSM3K337R .

History: RTQ045N03FRA | H7P1002DS | JBE083M | AP2762S-A-HF | KP751B | AP6P090H

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