SSM3310GJ Datasheet. Specs and Replacement

Type Designator: SSM3310GJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-251

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SSM3310GJ datasheet

 ..1. Size:421K  silicon standard
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SSM3310GJ

SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.5V low gate drive capability BV -20V DSS D Simple drive requirement R 150m DS(ON) Fast switching ID -10A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM3310GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for use in low voltage b... See More ⇒

Detailed specifications: SSM25T03GJ, SSM2602GY, SSM2602Y, SSM2603GY, SSM2603Y, SSM2605GY, SSM2761P-A, SSM3310GH, IRF1405, SSM3J331R, SSM3J338R, SSM3K2615R, SSM3K318R, SSM3K324R, SSM3K335R, SSM3K336R, SSM3K337R

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