SSM4502GM
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM4502GM
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 8.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 325
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
SO-8
SSM4502GM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM4502GM
Datasheet (PDF)
..1. Size:305K silicon standard
ssm4502gm.pdf
SSM4502GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20VD2Simple Drive Requirement D1 RDS(ON) 18mD1Low Gate ChargeID 8.3AFast Switching Performance G2S2P-CH BVDSS -20VG1S1SO-8RDS(ON) 45mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin
8.1. Size:209K silicon standard
ssm4500gm.pdf
SSM4500GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20VD2D2Simple Drive Requirement RDS(ON) 30mD1D1Low On-resistance ID 6AFast SwitchingG2P-CH BVDSS -20VS2G1SO-8S1RDS(ON) 50mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug
8.2. Size:293K silicon standard
ssm4501gm.pdf
SSM4501GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2Simple Drive Requirement D2RDS(ON) 28mD1Low On-resistance D1ID 7AFast Switching G2P-CH BVDSS -30VS2G1SO-8RDS(ON) 50mS1DESCRIPTION ID -5.3AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,
8.3. Size:249K silicon standard
ssm4501gsd.pdf
SSM4501GSDN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2D1RDS(ON) 27mSimple Drive Requirement D1Low On-resistance ID 7AFast Switching Characteristic P-CH BVDSS -30VG2S2RDS(ON) 49mPDIP-8G1S1DESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of
8.4. Size:425K silicon standard
ssm4509m.pdf
SSM4509GMN- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 14mLow on-resistance D1D1D1D1ID 10AFast switching characteristicG2G2P-CH BVDSS -30VS2S2 G1SO-8 S1G1RDS(ON) 20mS1 DescriptionID -8.4AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination
8.5. Size:232K silicon standard
ssm4507gm.pdf
SSM4507GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement D2RDS(ON) 36mD2D1D1Low On-resistance D1D1ID 6.0AFast Switching Performance G2G2 P-CH BVDSS -30VS2G1 S2SO-8 S1 G1 RDS(ON) 72mSO-8 S1DESCRIPTION ID -4.2AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer w
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