IRLMS1902 Datasheet. Specs and Replacement

Type Designator: IRLMS1902  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: MICRO6

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IRLMS1902 substitution

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IRLMS1902 datasheet

 ..1. Size:108K  international rectifier
irlms1902.pdf pdf_icon

IRLMS1902

PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged... See More ⇒

 0.1. Size:191K  international rectifier
irlms1902trpbf.pdf pdf_icon

IRLMS1902

PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

 0.2. Size:184K  international rectifier
irlms1902tr.pdf pdf_icon

IRLMS1902

PD - 91540C IRLMS1902 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T... See More ⇒

 8.1. Size:150K  international rectifier
irlms1503pbf.pdf pdf_icon

IRLMS1902

PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

Detailed specifications: IRLML2402, IRLML2502, IRLML2803, IRLML5103, IRLML6302, IRLML6401, IRLML6402, IRLMS1503, 5N65, IRLMS2002, IRLMS4502, IRLMS5703, IRLMS6702, IRLMS6802, IRLR010, IRLR014, IRLR014A

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