All MOSFET. IRLMS1902 Datasheet

 

IRLMS1902 Datasheet and Replacement


   Type Designator: IRLMS1902
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: MICRO6
 

 IRLMS1902 substitution

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IRLMS1902 Datasheet (PDF)

 ..1. Size:108K  international rectifier
 irlms1902.pdf pdf_icon

IRLMS1902

PD - 9.1540BIRLMS1902HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 20V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged

 0.1. Size:191K  international rectifier
 irlms1902trpbf.pdf pdf_icon

IRLMS1902

PD - 95359IRLMS1902PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per

 0.2. Size:184K  international rectifier
 irlms1902tr.pdf pdf_icon

IRLMS1902

PD - 91540CIRLMS1902HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFET3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. T

 8.1. Size:150K  international rectifier
 irlms1503pbf.pdf pdf_icon

IRLMS1902

PD - 95762IRLMS1503PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 30Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper

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Datasheet: IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , IRLML6302 , IRLML6401 , IRLML6402 , IRLMS1503 , IRF4905 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A .

Keywords - IRLMS1902 MOSFET datasheet

 IRLMS1902 cross reference
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