IRLMS1902 PDF and Equivalents Search

 

IRLMS1902 PDF Specs and Replacement


   Type Designator: IRLMS1902
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: MICRO6
 

 IRLMS1902 substitution

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IRLMS1902 PDF Specs

 ..1. Size:108K  international rectifier
irlms1902.pdf pdf_icon

IRLMS1902

PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged... See More ⇒

 0.1. Size:191K  international rectifier
irlms1902trpbf.pdf pdf_icon

IRLMS1902

PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

 0.2. Size:184K  international rectifier
irlms1902tr.pdf pdf_icon

IRLMS1902

PD - 91540C IRLMS1902 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T... See More ⇒

 8.1. Size:150K  international rectifier
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IRLMS1902

PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 30V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

Detailed specifications: IRLML2402 , IRLML2502 , IRLML2803 , IRLML5103 , IRLML6302 , IRLML6401 , IRLML6402 , IRLMS1503 , 5N65 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A .

History: APT6029SLL

Keywords - IRLMS1902 MOSFET specs

 IRLMS1902 cross reference
 IRLMS1902 equivalent finder
 IRLMS1902 pdf lookup
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