All MOSFET. IRF9Z14PBF Datasheet

 

IRF9Z14PBF Datasheet and Replacement


   Type Designator: IRF9Z14PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220AB
 

 IRF9Z14PBF substitution

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IRF9Z14PBF Datasheet (PDF)

 ..1. Size:251K  international rectifier
 irf9z14pbf.pdf pdf_icon

IRF9Z14PBF

PD - 95628IRF9Z14PbF Lead-Free8/3/04Document Number: 91088 www.vishay.com1IRF9Z14PbFDocument Number: 91088 www.vishay.com2IRF9Z14PbFDocument Number: 91088 www.vishay.com3IRF9Z14PbFDocument Number: 91088 www.vishay.com4IRF9Z14PbFDocument Number: 91088 www.vishay.com5IRF9Z14PbFDocument Number: 91088 www.vishay.com6IRF9Z14PbFPeak Diode Recovery

 ..2. Size:129K  vishay
 irf9z14pbf sihf9z14.pdf pdf_icon

IRF9Z14PBF

IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir

 ..3. Size:1813K  cn vbsemi
 irf9z14pbf.pdf pdf_icon

IRF9Z14PBF

IRF9Z14PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter

 7.1. Size:361K  international rectifier
 irf9z14s.pdf pdf_icon

IRF9Z14PBF

PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

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Datasheet: IRF9640LPBF , IRF9640PBF , IRF9640SPBF , IRF9910PBF-1 , IRF9952QPBF , IRF9Z10PBF , IRF9Z14L , IRF9Z14LPBF , P0903BDG , IRF9Z14SPBF , IRF9Z20PBF , IRF9Z24L , IRF9Z24NLPBF , IRF9Z24NPBF , IRF9Z24NSPBF , IRF9Z24PBF , IRF9Z24SPBF .

History: AMA461P | SML10026DFN | IRFS630B

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