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IRLMS6702 Specs and Replacement


   Type Designator: IRLMS6702
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: MICRO6
 

 IRLMS6702 substitution

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IRLMS6702 Specs

 ..1. Size:195K  international rectifier
irlms6702.pdf pdf_icon

IRLMS6702

PD - 91414C IRLMS6702 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T... See More ⇒

 ..2. Size:169K  international rectifier
irlms6702pbf.pdf pdf_icon

IRLMS6702

PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

 0.1. Size:204K  international rectifier
irlms6702pbf-1.pdf pdf_icon

IRLMS6702

IRLMS6702PbF-1 HEXFET Power MOSFET VDS -20 V A 1 6 D D RDS(on) max 0.200 (@V = -4.5V) GS 2 5 D D RDS(on) max 0.375 (@V = -2.7V) GS 3 4 G S Qg (typical) 5.8 nC Micro6 ID Top View -2.4 A (@T = 25 C) A Features Benefits Industry-standard pinout Micro-6 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufact... See More ⇒

 8.1. Size:148K  international rectifier
irlms6802pbf.pdf pdf_icon

IRLMS6702

PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l Lead-Free 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi... See More ⇒

Detailed specifications: IRLML6302 , IRLML6401 , IRLML6402 , IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRF530 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A , IRLR020 , IRLR024 , IRLR024A , IRLR024N .

History: APT6070AN | APT6060AN | HGI170N10A | 2SK3095LS | VBE1303

Keywords - IRLMS6702 MOSFET specs

 IRLMS6702 cross reference
 IRLMS6702 equivalent finder
 IRLMS6702 lookup
 IRLMS6702 substitution
 IRLMS6702 replacement

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