IRLMS6702 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLMS6702
Маркировка: 2C*_C*
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.7 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 0.7(min) V
Максимально допустимый постоянный ток стока |Id|: 2.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 5.8 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 130 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: MICRO6
IRLMS6702 Datasheet (PDF)
irlms6702.pdf
PD - 91414CIRLMS6702HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFET34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. T
irlms6702pbf.pdf
PD - 95224IRLMS6702PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFETl Lead-Free34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper
irlms6702pbf.pdf
PD - 95224IRLMS6702PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = -20Vl Ultra Low RDS(on)25DDl P-Channel MOSFETl Lead-Free34G S RDS(on) = 0.20DescriptionFifth Generation HEXFET power MOSFETs from Top ViewInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper
irlms6702pbf-1.pdf
IRLMS6702PbF-1HEXFET Power MOSFETVDS -20 VA1 6D DRDS(on) max 0.200(@V = -4.5V)GS25 DDRDS(on) max 0.375(@V = -2.7V)GS34G SQg (typical) 5.8 nCMicro6ID Top View-2.4 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout Micro-6 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufact
irlms6802pbf.pdf
PD- 94897IRLMS6802PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell Lead-Free3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi
irlms6802.pdf
PD- 91848EIRLMS6802HEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reel3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitprov
irlms6802pbf.pdf
PD- 94897IRLMS6802PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l P-Channel MOSFET D DVDSS = -20Vl Surface Mount25DDl Available in Tape & Reell Lead-Free3 4G SRDS(on) = 0.050Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi
irlms6802trpbf.pdf
IRLMS6802TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm
Другие MOSFET... IRLML6302 , IRLML6401 , IRLML6402 , IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRF2807 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A , IRLR020 , IRLR024 , IRLR024A , IRLR024N .
