SSM630GP Datasheet. Specs and Replacement

Type Designator: SSM630GP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220

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SSM630GP datasheet

 ..1. Size:623K  silicon standard
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SSM630GP

SSM630GP N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM630GP achieves fast switching performance BVDSS 200V with low gate charge without a complex drive circuit. It is RDS(ON) 400m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 9A D Pb-free; RoHS-compliant TO-220 The SSM630GP is in TO-220 for thr... See More ⇒

Detailed specifications: SSM5H12TU, SSM5H16TU, SSM5H90ATU, SSM5P15FE, SSM60T03GH, SSM60T03GJ, SSM60T03GP, SSM60T03GS, 50N06, SSM6618M, SSM6679GM, SSM6680GM, SSM6923O, SSM6G18NU, SSM6H19NU, SSM6J216FE, SSM6J414TU

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