SSM630GP Datasheet and Replacement
Type Designator: SSM630GP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220
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SSM630GP Datasheet (PDF)
ssm630gp.pdf

SSM630GPN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM630GP achieves fast switching performanceBVDSS 200Vwith low gate charge without a complex drive circuit. It isRDS(ON) 400msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 9AD Pb-free; RoHS-compliant TO-220The SSM630GP is in TO-220 for thr
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - SSM630GP MOSFET datasheet
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History: MCH3484 | DMN30H4D0L



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