All MOSFET. SSM630GP Datasheet

 

SSM630GP Datasheet and Replacement


   Type Designator: SSM630GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
 

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SSM630GP Datasheet (PDF)

 ..1. Size:623K  silicon standard
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SSM630GP

SSM630GPN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM630GP achieves fast switching performanceBVDSS 200Vwith low gate charge without a complex drive circuit. It isRDS(ON) 400msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 9AD Pb-free; RoHS-compliant TO-220The SSM630GP is in TO-220 for thr

Datasheet: SSM5H12TU , SSM5H16TU , SSM5H90ATU , SSM5P15FE , SSM60T03GH , SSM60T03GJ , SSM60T03GP , SSM60T03GS , 50N06 , SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , SSM6G18NU , SSM6H19NU , SSM6J216FE , SSM6J414TU .

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