SSM6H19NU Datasheet. Specs and Replacement

Type Designator: SSM6H19NU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: UDFN6

  📄📄 Copy 

SSM6H19NU substitution

- MOSFET ⓘ Cross-Reference Search

 

SSM6H19NU datasheet

 ..1. Size:257K  toshiba
 ssm6h19nu.pdf pdf_icon

SSM6H19NU

SSM6H19NU Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU SSM6H19NU SSM6H19NU SSM6H19NU 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) N-channel MOSFET and a schottky barrier diode in one package. 2.1. MOSFET Features 2.1. MOSFET Features 2.1. MOSFET Features ... See More ⇒

Detailed specifications: SSM60T03GP, SSM60T03GS, SSM630GP, SSM6618M, SSM6679GM, SSM6680GM, SSM6923O, SSM6G18NU, IRFB4110, SSM6J216FE, SSM6J414TU, SSM6J505NU, SSM6J507NU, SSM6J512NU, SSM6J771G, SSM6K217FE, SSM6K504NU

Keywords - SSM6H19NU MOSFET specs

 SSM6H19NU cross reference

 SSM6H19NU equivalent finder

 SSM6H19NU pdf lookup

 SSM6H19NU substitution

 SSM6H19NU replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs