All MOSFET. SSM6H19NU Datasheet

 

SSM6H19NU Datasheet and Replacement


   Type Designator: SSM6H19NU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
   Package: UDFN6
 

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SSM6H19NU Datasheet (PDF)

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SSM6H19NU

SSM6H19NUComposite Devices Silicon N-Channel MOS/Epitaxial Schottky BarrierSSM6H19NUSSM6H19NUSSM6H19NUSSM6H19NU1. Applications1. Applications1. Applications1. Applications DC-DC Converters2. Features2. Features2. Features2. Features(1) N-channel MOSFET and a schottky barrier diode in one package.2.1. MOSFET Features2.1. MOSFET Features2.1. MOSFET Features

Datasheet: SSM60T03GP , SSM60T03GS , SSM630GP , SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , SSM6G18NU , IRF640N , SSM6J216FE , SSM6J414TU , SSM6J505NU , SSM6J507NU , SSM6J512NU , SSM6J771G , SSM6K217FE , SSM6K504NU .

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