All MOSFET. SSM6H19NU Datasheet

 

SSM6H19NU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM6H19NU
   Marking Code: KE5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.2 nC
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
   Package: UDFN6

 SSM6H19NU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM6H19NU Datasheet (PDF)

 ..1. Size:257K  toshiba
 ssm6h19nu.pdf

SSM6H19NU SSM6H19NU

SSM6H19NUComposite Devices Silicon N-Channel MOS/Epitaxial Schottky BarrierSSM6H19NUSSM6H19NUSSM6H19NUSSM6H19NU1. Applications1. Applications1. Applications1. Applications DC-DC Converters2. Features2. Features2. Features2. Features(1) N-channel MOSFET and a schottky barrier diode in one package.2.1. MOSFET Features2.1. MOSFET Features2.1. MOSFET Features

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