SSM72T02GH MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM72T02GH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 62 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-252
SSM72T02GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM72T02GH Datasheet (PDF)
..1. Size:168K silicon standard
ssm72t02gh.pdf
ssm72t02gh.pdf
SSM72T02GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 25VRDS(ON) 9mSimple Drive Requirement Low On-ResistanceID 62AGFast Switching CharacteristicSDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. GDS TO-252(H)provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
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