All MOSFET. SSM75T10GP Datasheet

 

SSM75T10GP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM75T10GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 72 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 69 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220

 SSM75T10GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM75T10GP Datasheet (PDF)

 ..1. Size:292K  silicon standard
 ssm75t10gp ssm75t10gs.pdf

SSM75T10GP SSM75T10GP

SSM75T10GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BV 100VDSSDSimple drive requirement R 15mDS(ON)Fast switching I 72ADGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM75T10GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SWHA106R95VS

 

 
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