SSM75T10GP Datasheet. Specs and Replacement

Type Designator: SSM75T10GP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-220

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SSM75T10GP datasheet

 ..1. Size:292K  silicon standard
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SSM75T10GP

SSM75T10GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge BV 100V DSS D Simple drive requirement R 15m DS(ON) Fast switching I 72A D G Pb-free, RoHS compliant. S DESCRIPTION G The SSM75T10GS is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as ... See More ⇒

Detailed specifications: SSM6N7002CFU, SSM6N7002KFU, SSM7002DGU, SSM7002EGU, SSM7002KGEN, SSM70T03GH, SSM70T03GJ, SSM72T02GH, IRLB4132, SSM75T10GS, SSM7811GM, SSM85T03GH, SSM85T03GJ, SSM85T08GP, SSM90T03GH, SSM90T03GJ, SSM90T03GP

Keywords - SSM75T10GP MOSFET specs

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