All MOSFET. SSM75T10GP Datasheet

 

SSM75T10GP Datasheet and Replacement


   Type Designator: SSM75T10GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220
 

 SSM75T10GP substitution

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SSM75T10GP Datasheet (PDF)

 ..1. Size:292K  silicon standard
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SSM75T10GP

SSM75T10GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BV 100VDSSDSimple drive requirement R 15mDS(ON)Fast switching I 72ADGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM75T10GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as

Datasheet: SSM6N7002CFU , SSM6N7002KFU , SSM7002DGU , SSM7002EGU , SSM7002KGEN , SSM70T03GH , SSM70T03GJ , SSM72T02GH , 5N60 , SSM75T10GS , SSM7811GM , SSM85T03GH , SSM85T03GJ , SSM85T08GP , SSM90T03GH , SSM90T03GJ , SSM90T03GP .

History: CSD15380F3 | K1109 | GSM3814W | KF3N60D | HYG065N07NS1B | AMA960N | HYG065N15NS1B6

Keywords - SSM75T10GP MOSFET datasheet

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