All MOSFET. SSM75T10GS Datasheet

 

SSM75T10GS Datasheet and Replacement


   Type Designator: SSM75T10GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 72 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-263
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SSM75T10GS Datasheet (PDF)

 ..1. Size:292K  silicon standard
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SSM75T10GS

SSM75T10GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BV 100VDSSDSimple drive requirement R 15mDS(ON)Fast switching I 72ADGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM75T10GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PNMDP100V10 | IRFSL4410PBF | FQP3P20 | SSF5N80A | TDM3307A | IRFS640A | SSH7N90A

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