SSM75T10GS Datasheet. Specs and Replacement
Type Designator: SSM75T10GS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 72 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 540 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO-263
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SSM75T10GS substitution
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SSM75T10GS datasheet
ssm75t10gp ssm75t10gs.pdf
SSM75T10GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge BV 100V DSS D Simple drive requirement R 15m DS(ON) Fast switching I 72A D G Pb-free, RoHS compliant. S DESCRIPTION G The SSM75T10GS is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as ... See More ⇒
Detailed specifications: SSM6N7002KFU, SSM7002DGU, SSM7002EGU, SSM7002KGEN, SSM70T03GH, SSM70T03GJ, SSM72T02GH, SSM75T10GP, AO3401, SSM7811GM, SSM85T03GH, SSM85T03GJ, SSM85T08GP, SSM90T03GH, SSM90T03GJ, SSM90T03GP, SSM90T03GS
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