SSM75T10GS MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM75T10GS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 72 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 540 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO-263
SSM75T10GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM75T10GS Datasheet (PDF)
..1. Size:292K silicon standard
ssm75t10gp ssm75t10gs.pdf
ssm75t10gp ssm75t10gs.pdf
SSM75T10GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BV 100VDSSDSimple drive requirement R 15mDS(ON)Fast switching I 72ADGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM75T10GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as
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