All MOSFET. SSM75T10GS Datasheet

 

SSM75T10GS Datasheet and Replacement


   Type Designator: SSM75T10GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-263
 

 SSM75T10GS substitution

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SSM75T10GS Datasheet (PDF)

 ..1. Size:292K  silicon standard
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SSM75T10GS

SSM75T10GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BV 100VDSSDSimple drive requirement R 15mDS(ON)Fast switching I 72ADGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM75T10GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as

Datasheet: SSM6N7002KFU , SSM7002DGU , SSM7002EGU , SSM7002KGEN , SSM70T03GH , SSM70T03GJ , SSM72T02GH , SSM75T10GP , AO3400 , SSM7811GM , SSM85T03GH , SSM85T03GJ , SSM85T08GP , SSM90T03GH , SSM90T03GJ , SSM90T03GP , SSM90T03GS .

History: FM200CD1D5B | FQPF19N20CYDTU | MTH6N100 | IRFS38N20D | SI4890BDY | FL6L5206 | WMB70N04T1

Keywords - SSM75T10GS MOSFET datasheet

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