All MOSFET. SSM7811GM Datasheet

 

SSM7811GM Datasheet and Replacement


   Type Designator: SSM7811GM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 11.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8
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SSM7811GM Datasheet (PDF)

 ..1. Size:595K  silicon standard
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SSM7811GM

SSM7811GMN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7811GM acheives fast switching performanceBVDSS 25Vwith low gate charge without a complex drive circuit. It RDS(ON) 12mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 11.8AD The SSM7811GM is supplied in an RoHS-compliantPb-free; Ro

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History: WML10N80D1 | P0706BV | ZVN3306F | FDN86246 | NDB6030L | AUIRL3705Z | NTD20N06

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