SSM85T03GJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM85T03GJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-251
SSM85T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM85T03GJ Datasheet (PDF)
ssm85t03gh ssm85t03gj.pdf
SSM85T03GH,JN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement R 6mDS(ON) Fast switching ID 75AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM85T03GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC
ssm85t08gp.pdf
SSM85T08GPN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 80VSimple Drive Requirement RDS(ON) 13mLow On-resistance Fast Switching Characteristic ID 75AGSDESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiven
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