SSM9620M Datasheet and Replacement
Type Designator: SSM9620M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 9.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 845 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO-8
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SSM9620M Datasheet (PDF)
ssm9620m.pdf

SSM9620MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS -20VDDCapable of 2.5V drive D R 20mDS(ON)DFast switching ID -9.5AGSimple drive requirement SSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.ST
ssm9685m.pdf

SSM9685MN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 80VDSSDDLower gate charge R 45mDS(ON)DDFast switching characteristics ID 5.3AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice design, low on-resistance and cost-effectiveness.GS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - SSM9620M MOSFET datasheet
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History: TK2P60D | IRFBG20



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