SSM9620M Datasheet and Replacement
Type Designator: SSM9620M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 845 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO-8
SSM9620M substitution
SSM9620M Datasheet (PDF)
ssm9620m.pdf

SSM9620MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS -20VDDCapable of 2.5V drive D R 20mDS(ON)DFast switching ID -9.5AGSimple drive requirement SSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.ST
ssm9685m.pdf

SSM9685MN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 80VDSSDDLower gate charge R 45mDS(ON)DDFast switching characteristics ID 5.3AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice design, low on-resistance and cost-effectiveness.GS
Datasheet: SSM9564GM , SSM9567GM , SSM9575M , SSM9585GM , SSM9585GP , SSM95T06GP , SSM95T06GS , SSM95T07GP , 10N65 , SSM9685M , SSM9915GH , SSM9915GJ , SSM9915K , SSM9916GH , SSM9916GJ , SSM9918GH , SSM9918GJ .
History: SSM9915GH | HGS220N10SL
Keywords - SSM9620M MOSFET datasheet
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History: SSM9915GH | HGS220N10SL



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