SSN1N45BBU Datasheet and Replacement
Type Designator: SSN1N45BBU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
Package: TO-92
SSN1N45BBU substitution
SSN1N45BBU Datasheet (PDF)
ssn1n45bbu ssn1n45bta.pdf
SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes
ssn1n45b.pdf
SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes
Datasheet: SSM9977GJ , SSM9977GM , SSM9980GH , SSM9980GJ , SSM9980M , SSM9985GM , SSM9987GH , SSM9987GM , IRFZ44 , SSN1N45BTA , SSP3N90 , SSP45N20B , SSP4N60B , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B .
Keywords - SSN1N45BBU MOSFET datasheet
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