All MOSFET. SSN1N45BBU Datasheet

 

SSN1N45BBU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSN1N45BBU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.25 Ohm
   Package: TO-92

 SSN1N45BBU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSN1N45BBU Datasheet (PDF)

 ..1. Size:666K  fairchild semi
 ssn1n45bbu ssn1n45bta.pdf

SSN1N45BBU SSN1N45BBU

SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes

 6.1. Size:667K  fairchild semi
 ssn1n45b.pdf

SSN1N45BBU SSN1N45BBU

SSN1N45B450V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to 100% avalanche tes

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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