All MOSFET. SSR1N60BTM Datasheet

 

SSR1N60BTM MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSR1N60BTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.9 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: D-PAK

 SSR1N60BTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSR1N60BTM Datasheet (PDF)

 ..1. Size:678K  fairchild semi
 ssr1n60b ssr1n60btm ssu1n60b.pdf

SSR1N60BTM SSR1N60BTM

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

 7.1. Size:196K  1
 ssu1n60a ssr1n60a.pdf

SSR1N60BTM SSR1N60BTM

 7.2. Size:502K  samsung
 ssr1n60a.pdf

SSR1N60BTM SSR1N60BTM

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 9.1. Size:197K  1
 ssu1n50a ssr1n50a.pdf

SSR1N60BTM SSR1N60BTM

 9.2. Size:104K  samsung
 ssr1n45 ssu1n45.pdf

SSR1N60BTM SSR1N60BTM

 9.3. Size:504K  samsung
 ssr1n50a.pdf

SSR1N60BTM SSR1N60BTM

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top