All MOSFET. SSRK7002LT1G Datasheet

 

SSRK7002LT1G Datasheet and Replacement


   Type Designator: SSRK7002LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
 

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SSRK7002LT1G Datasheet (PDF)

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SSRK7002LT1G

LESHAN RADIO COMPANY, LTD.DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1GMODE FIELD EFFECT TRANSISTOR 3Low On-Resistance Fast Switching Speed 1Low-voltage drive 2Easily designed drive circuits SOT-23Pb-Free Package is available. The suffix G means Pb-free package 3ESD Protected:1000VOrdering Information(Pb-free) 1Device Marking Shipping SSRK7002LT1G RS 30

Datasheet: SSP45N20B , SSP4N60B , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , SSR2N60B , IRFB4110 , SSS4N60B , SSSF11NS65UF , SST174 , SST175 , SST176 , SST177 , SST4391 , SST4392 .

History: SI7N65F

Keywords - SSRK7002LT1G MOSFET datasheet

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