All MOSFET. SSSF11NS65UF Datasheet

 

SSSF11NS65UF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSSF11NS65UF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F

 SSSF11NS65UF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSSF11NS65UF Datasheet (PDF)

 ..1. Size:434K  silikron
 sssf11ns65uf.pdf

SSSF11NS65UF SSSF11NS65UF

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1462 | TK80S04K3L | IPA60R250CP | TK9J90E | HRLD250N10K

 

 
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