All MOSFET. SSSF11NS65UF Datasheet

 

SSSF11NS65UF Datasheet and Replacement


   Type Designator: SSSF11NS65UF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220F
 

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SSSF11NS65UF Datasheet (PDF)

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SSSF11NS65UF

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

Datasheet: SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , SSR2N60B , SSRK7002LT1G , SSS4N60B , IRF9540 , SST174 , SST175 , SST176 , SST177 , SST4391 , SST4392 , SST4393 , SST440 .

History: AP2R803GMT-HF | RD3P175SN

Keywords - SSSF11NS65UF MOSFET datasheet

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