SSSF11NS65UF Datasheet. Specs and Replacement
Type Designator: SSSF11NS65UF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 34 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
SSSF11NS65UF substitution
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SSSF11NS65UF datasheet
sssf11ns65uf.pdf
SSF11NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UF series MOSFETs is a new... See More ⇒
Detailed specifications: SSP4N80, SSP5N90, SSR1N45, SSR1N60B, SSR1N60BTM, SSR2N60B, SSRK7002LT1G, SSS4N60B, 2N7000, SST174, SST175, SST176, SST177, SST4391, SST4392, SST4393, SST440
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