All MOSFET. SSU2N60B Datasheet

 

SSU2N60B Datasheet and Replacement


   Type Designator: SSU2N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: I-PAK
 

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SSU2N60B Datasheet (PDF)

 ..1. Size:645K  fairchild semi
 ssr2n60b ssu2n60b.pdf pdf_icon

SSU2N60B

November 2001SSR2N60B / SSU2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

 7.1. Size:201K  1
 ssu2n60a ssr2n60a.pdf pdf_icon

SSU2N60B

 9.1. Size:498K  samsung
 ssu2n80a.pdf pdf_icon

SSU2N60B

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

Datasheet: SST4393 , SST440 , SST441 , SST4416 , SSTSD201 , SSTSD203 , SSU1N45 , SSU1N60B , SPP20N60C3 , SSW2N60B , SSW4N60B , AF15N50 , AFC1016 , AFC1539 , AFC1563 , AFC2519W , AFC3326WS .

History: SFB087N80C2 | SMK1350F | SML4080CN | NTMS4816NR2G | FS10AS-3 | SML1004R2BN | SVT25600NT

Keywords - SSU2N60B MOSFET datasheet

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