AF15N50 Datasheet and Replacement
Type Designator: AF15N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.85 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN-5?6-8
AF15N50 substitution
AF15N50 Datasheet (PDF)
af15n50.pdf

Data Sheet 50V N-Channel MOSFET AF15N50 Features General Description Typ RDS(ON)=14.32m @ VGS=10V, ID=15A This N-Channel MOSFET has been designed Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A specifically to improve the overall efficiency and to RoHS Compliantminimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM
fqaf15n70.pdf

April 2000TMQFETQFETQFETQFET 700V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 700V, RDS(on) = 0.56 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has b
Datasheet: SST4416 , SSTSD201 , SSTSD203 , SSU1N45 , SSU1N60B , SSU2N60B , SSW2N60B , SSW4N60B , IRF9540N , AFC1016 , AFC1539 , AFC1563 , AFC2519W , AFC3326WS , AFC3346W , AFC3366W , AFC4510S .
History: IRF7380PBF-1
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History: IRF7380PBF-1



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