All MOSFET. AF15N50 Datasheet

 

AF15N50 Datasheet and Replacement


   Type Designator: AF15N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.85 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN-5?6-8
 

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AF15N50 Datasheet (PDF)

 ..1. Size:246K  bcdsemi
 af15n50.pdf pdf_icon

AF15N50

Data Sheet 50V N-Channel MOSFET AF15N50 Features General Description Typ RDS(ON)=14.32m @ VGS=10V, ID=15A This N-Channel MOSFET has been designed Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A specifically to improve the overall efficiency and to RoHS Compliantminimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM

 9.1. Size:743K  fairchild semi
 fqaf15n70.pdf pdf_icon

AF15N50

April 2000TMQFETQFETQFETQFET 700V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 700V, RDS(on) = 0.56 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has b

Datasheet: SST4416 , SSTSD201 , SSTSD203 , SSU1N45 , SSU1N60B , SSU2N60B , SSW2N60B , SSW4N60B , AON7410 , AFC1016 , AFC1539 , AFC1563 , AFC2519W , AFC3326WS , AFC3346W , AFC3366W , AFC4510S .

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