All MOSFET. AFC1016 Datasheet

 

AFC1016 Datasheet and Replacement


   Type Designator: AFC1016
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT-563
 

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AFC1016 Datasheet (PDF)

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AFC1016

AFC1016 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC1016, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/0.6A,RDS(ON)= 360m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)= 420m@VGS=2.5V These devices are particularly suited for low 20V/0.4A,RDS(ON)= 560m

Datasheet: SSTSD201 , SSTSD203 , SSU1N45 , SSU1N60B , SSU2N60B , SSW2N60B , SSW4N60B , AF15N50 , IRF9540N , AFC1539 , AFC1563 , AFC2519W , AFC3326WS , AFC3346W , AFC3366W , AFC4510S , AFC4516 .

History: FQB16N25TM | IRFD9012

Keywords - AFC1016 MOSFET datasheet

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