AFC1016 Datasheet. Specs and Replacement

Type Designator: AFC1016  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT-563

AFC1016 substitution

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AFC1016 datasheet

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AFC1016

AFC1016 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC1016, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/0.6A,RDS(ON)= 360m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)= 420m @VGS=2.5V These devices are particularly suited for low 20V/0.4A,RDS(ON)= 560m... See More ⇒

Detailed specifications: SSTSD201, SSTSD203, SSU1N45, SSU1N60B, SSU2N60B, SSW2N60B, SSW4N60B, AF15N50, SKD502T, AFC1539, AFC1563, AFC2519W, AFC3326WS, AFC3346W, AFC3366W, AFC4510S, AFC4516

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