AFC2519W Datasheet. Specs and Replacement
Type Designator: AFC2519W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: DFN2X2-6L
AFC2519W substitution
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AFC2519W datasheet
afc2519w.pdf
AFC2519W Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC2519W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/4.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m @VGS=2.5V These devices are particularly suited for low 20V/2.4A,RDS(ON)=80m @VG... See More ⇒
Detailed specifications: SSU1N60B, SSU2N60B, SSW2N60B, SSW4N60B, AF15N50, AFC1016, AFC1539, AFC1563, AON7410, AFC3326WS, AFC3346W, AFC3366W, AFC4510S, AFC4516, AFC4516W, AFC4539S, AFC4539WS
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
