All MOSFET. AFC2519W Datasheet

 

AFC2519W Datasheet and Replacement


   Type Designator: AFC2519W
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: DFN2X2-6L
 

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AFC2519W Datasheet (PDF)

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AFC2519W

AFC2519W Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC2519W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/4.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m@VGS=2.5V These devices are particularly suited for low 20V/2.4A,RDS(ON)=80m@VG

Datasheet: SSU1N60B , SSU2N60B , SSW2N60B , SSW4N60B , AF15N50 , AFC1016 , AFC1539 , AFC1563 , 5N60 , AFC3326WS , AFC3346W , AFC3366W , AFC4510S , AFC4516 , AFC4516W , AFC4539S , AFC4539WS .

History: IXFT36N60P | SSP45N20B

Keywords - AFC2519W MOSFET datasheet

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