AFC3326WS Datasheet. Specs and Replacement
Type Designator: AFC3326WS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: DFN3X3-8L
AFC3326WS substitution
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AFC3326WS datasheet
afc3326ws.pdf
AFC3326WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC3326WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power manag... See More ⇒
afc3346w.pdf
AFC3346W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC3346W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 28m @VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)= 38m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power manag... See More ⇒
afc3366w.pdf
AFC3366W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC3366W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=48m @VGS=10V provide excellent RDS(ON), low gate charge. 60V/10A,RDS(ON)=54m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power managem... See More ⇒
Detailed specifications: SSU2N60B, SSW2N60B, SSW4N60B, AF15N50, AFC1016, AFC1539, AFC1563, AFC2519W, 12N60, AFC3346W, AFC3366W, AFC4510S, AFC4516, AFC4516W, AFC4539S, AFC4539WS, AFC4559
Keywords - AFC3326WS MOSFET specs
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