AFC5521 PDF Specs and Replacement
Type Designator: AFC5521
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-252-4L
AFC5521 substitution
AFC5521 PDF Specs
afc5521.pdf
AFC5521 Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5521, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/5.0A,RDS(ON)= 110m @VGS=10V to provide excellent RDS(ON), low gate charge. 100V/3.0A,RDS(ON)= 120m @VGS=4.5V These devices are particularly suited for low P-Channel voltage p... See More ⇒
Detailed specifications: AFC4510S , AFC4516 , AFC4516W , AFC4539S , AFC4539WS , AFC4559 , AFC4599 , AFC4604W , TK10A60D , AFC5604 , AFC5606 , AFC6332 , AFC6601 , AFC6602 , AFC6604 , AFC8562 , AFN02N60T220FT .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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