AFC5521 Datasheet. Specs and Replacement

Type Designator: AFC5521  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-252-4L

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AFC5521 datasheet

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AFC5521

AFC5521 Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5521, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/5.0A,RDS(ON)= 110m @VGS=10V to provide excellent RDS(ON), low gate charge. 100V/3.0A,RDS(ON)= 120m @VGS=4.5V These devices are particularly suited for low P-Channel voltage p... See More ⇒

Detailed specifications: AFC4510S, AFC4516, AFC4516W, AFC4539S, AFC4539WS, AFC4559, AFC4599, AFC4604W, STP80NF70, AFC5604, AFC5606, AFC6332, AFC6601, AFC6602, AFC6604, AFC8562, AFN02N60T220FT

Keywords - AFC5521 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.