All MOSFET. AFC5521 Datasheet

 

AFC5521 Datasheet and Replacement


   Type Designator: AFC5521
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-252-4L
 

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AFC5521 Datasheet (PDF)

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AFC5521

AFC5521 Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5521, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/5.0A,RDS(ON)= 110m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/3.0A,RDS(ON)= 120m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

Datasheet: AFC4510S , AFC4516 , AFC4516W , AFC4539S , AFC4539WS , AFC4559 , AFC4599 , AFC4604W , IRFZ24N , AFC5604 , AFC5606 , AFC6332 , AFC6601 , AFC6602 , AFC6604 , AFC8562 , AFN02N60T220FT .

Keywords - AFC5521 MOSFET datasheet

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