All MOSFET. AFC5606 Datasheet

 

AFC5606 Datasheet and Replacement


   Type Designator: AFC5606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-252-4L
 

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AFC5606 Datasheet (PDF)

 ..1. Size:1051K  alfa-mos
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AFC5606

AFC5606 Alfa-MOS 60V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5606, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 60V/15A,RDS(ON)=42m@VGS=10V to provide excellent RDS(ON), low gate charge. 60V/12A,RDS(ON)=50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 8.1. Size:1117K  alfa-mos
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AFC5606

AFC5604 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/15A,RDS(ON)= 20m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)= 30m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma

Datasheet: AFC4516W , AFC4539S , AFC4539WS , AFC4559 , AFC4599 , AFC4604W , AFC5521 , AFC5604 , CS150N03A8 , AFC6332 , AFC6601 , AFC6602 , AFC6604 , AFC8562 , AFN02N60T220FT , AFN02N60T220T , AFN02N60T251T .

History: STS8C6H3LL

Keywords - AFC5606 MOSFET datasheet

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