AFC5606 Datasheet. Specs and Replacement
Type Designator: AFC5606 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO-252-4L
AFC5606 substitution
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AFC5606 datasheet
afc5606.pdf
AFC5606 Alfa-MOS 60V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5606, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 60V/15A,RDS(ON)=42m @VGS=10V to provide excellent RDS(ON), low gate charge. 60V/12A,RDS(ON)=50m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana... See More ⇒
afc5604.pdf
AFC5604 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC5604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/15A,RDS(ON)= 20m @VGS=10V to provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)= 30m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma... See More ⇒
Detailed specifications: AFC4516W, AFC4539S, AFC4539WS, AFC4559, AFC4599, AFC4604W, AFC5521, AFC5604, BS170, AFC6332, AFC6601, AFC6602, AFC6604, AFC8562, AFN02N60T220FT, AFN02N60T220T, AFN02N60T251T
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