IRLR2703 Specs and Replacement
Type Designator: IRLR2703
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id| ⓘ - Maximum Drain Current: 23
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 210
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
TO252
-
MOSFET ⓘ Cross-Reference Search
IRLR2703 Specs
..1. Size:313K international rectifier
irlr2703 irlu2703.pdf 
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te... See More ⇒
..2. Size:313K international rectifier
irlu2703pbf irlr2703pbf.pdf 
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te... See More ⇒
..3. Size:210K international rectifier
irlr2703.pdf 
PD- 9.1335B IRLR/U2703 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703) RDS(on) = 0.045 G Advanced Process Technology Fast Switching ID = 23A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to... See More ⇒
..4. Size:241K inchange semiconductor
irlr2703.pdf 
isc N-Channel MOSFET Transistor IRLR2703, IIRLR2703 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-... See More ⇒
0.1. Size:276K international rectifier
auirlr2703tr.pdf 
PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 30V 175 C Operating Temperature RDS(on) max. 45m Fast Switching G ID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20... See More ⇒
0.2. Size:448K infineon
auirlr2703.pdf 
AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175 C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjm... See More ⇒
7.1. Size:162K international rectifier
irlr2705.pdf 
PD- 9.1317B IRLR/U2705 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705) RDS(on) = 0.040 G Advanced Process Technology Fast Switching ID = 28A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to... See More ⇒
7.2. Size:260K international rectifier
irlr2705pbf irlu2705pbf.pdf 
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p... See More ⇒
7.3. Size:260K international rectifier
irlu2705pbf irlr2705pbf.pdf 
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p... See More ⇒
7.4. Size:769K cn vbsemi
irlr2705trpbf.pdf 
IRLR2705TRPBF www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise... See More ⇒
7.5. Size:241K inchange semiconductor
irlr2705.pdf 
isc N-Channel MOSFET Transistor IRLR2705, IIRLR2705 FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-... See More ⇒
Detailed specifications: IRLR024N
, IRLR110A
, IRLR120A
, IRLR120N
, IRLR130A
, IRLR210A
, IRLR220A
, IRLR230A
, SI2302
, IRLR2705
, IRLR2905
, IRLR3103
, IRLR3303
, IRLR3410
, IRLS510A
, IRLS520A
, IRLS530A
.
History: HGI110N08AL
Keywords - IRLR2703 MOSFET specs
IRLR2703 cross reference
IRLR2703 equivalent finder
IRLR2703 lookup
IRLR2703 substitution
IRLR2703 replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility