PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te

PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te

PD- 9.1335BIRLR/U2703PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703)RDS(on) = 0.045G Advanced Process Technology Fast SwitchingID = 23A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to

isc N-Channel MOSFET Transistor IRLR2703, IIRLR2703FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-

PD - 97620AUTOMOTIVE GRADEAUIRLR2703 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate Drive Low On-ResistanceD Dynamic dV/dT Rating V(BR)DSS 30V 175C Operating TemperatureRDS(on) max.45m Fast SwitchingGID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)20

AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjm

PD- 9.1317BIRLR/U2705PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705)RDS(on) = 0.040G Advanced Process Technology Fast SwitchingID = 28A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

IRLR2705TRPBFwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

isc N-Channel MOSFET Transistor IRLR2705, IIRLR2705FEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-