Справочник MOSFET. IRLR2703

 

IRLR2703 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLR2703

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 45 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 16 V

Пороговое напряжение включения |Ugs(th)|: 1(min) V

Максимально допустимый постоянный ток стока |Id|: 23 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 15(max) nC

Время нарастания (tr): 140 ns

Выходная емкость (Cd): 210 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm

Тип корпуса: TO252

Аналог (замена) для IRLR2703

 

 

IRLR2703 Datasheet (PDF)

 ..1. Size:313K  international rectifier
 irlu2703pbf irlr2703pbf.pdf

IRLR2703 IRLR2703

PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te

 ..2. Size:210K  international rectifier
 irlr2703.pdf

IRLR2703 IRLR2703

PD- 9.1335BIRLR/U2703PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703)RDS(on) = 0.045G Advanced Process Technology Fast SwitchingID = 23A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to

 ..3. Size:313K  infineon
 irlr2703 irlu2703.pdf

IRLR2703 IRLR2703

PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te

 ..4. Size:241K  inchange semiconductor
 irlr2703.pdf

IRLR2703 IRLR2703

isc N-Channel MOSFET Transistor IRLR2703, IIRLR2703FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-

 0.1. Size:276K  international rectifier
 auirlr2703tr.pdf

IRLR2703 IRLR2703

PD - 97620AUTOMOTIVE GRADEAUIRLR2703 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate Drive Low On-ResistanceD Dynamic dV/dT Rating V(BR)DSS 30V 175C Operating TemperatureRDS(on) max.45m Fast SwitchingGID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)20

 0.2. Size:448K  infineon
 auirlr2703.pdf

IRLR2703 IRLR2703

AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjm

 7.1. Size:260K  international rectifier
 irlu2705pbf irlr2705pbf.pdf

IRLR2703 IRLR2703

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

 7.2. Size:162K  international rectifier
 irlr2705.pdf

IRLR2703 IRLR2703

PD- 9.1317BIRLR/U2705PRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705)RDS(on) = 0.040G Advanced Process Technology Fast SwitchingID = 28A S Fully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to

 7.3. Size:260K  infineon
 irlr2705pbf irlu2705pbf.pdf

IRLR2703 IRLR2703

PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp

 7.4. Size:769K  cn vbsemi
 irlr2705trpbf.pdf

IRLR2703 IRLR2703

IRLR2705TRPBFwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 7.5. Size:241K  inchange semiconductor
 irlr2705.pdf

IRLR2703 IRLR2703

isc N-Channel MOSFET Transistor IRLR2705, IIRLR2705FEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

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