All MOSFET. AFC8562 Datasheet

 

AFC8562 Datasheet and Replacement


   Type Designator: AFC8562
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP-8P
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AFC8562 Datasheet (PDF)

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AFC8562

AFC8562 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC8562, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/5.4A,RDS(ON)=27m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=32m@VGS=2.5V These devices are particularly suited for low 20V/3.0A,RDS(ON)=44m@VG

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

Keywords - AFC8562 MOSFET datasheet

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