All MOSFET. AFC8562 Datasheet

 

AFC8562 Datasheet and Replacement


   Type Designator: AFC8562
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP-8P
 

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AFC8562 Datasheet (PDF)

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AFC8562

AFC8562 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC8562, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/5.4A,RDS(ON)=27m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=32m@VGS=2.5V These devices are particularly suited for low 20V/3.0A,RDS(ON)=44m@VG

Datasheet: AFC4604W , AFC5521 , AFC5604 , AFC5606 , AFC6332 , AFC6601 , AFC6602 , AFC6604 , STP80NF70 , AFN02N60T220FT , AFN02N60T220T , AFN02N60T251T , AFN04N60T220FT , AFN04N60T220T , AFN04N60T251T , AFN06N60T220FT , AFN06N60T251T .

History: IRFU3505 | NCE70T1K2R | ME1302AT3-G | AMR434N | AMR494N | NCE70T1K2I | SVT037R0NL3

Keywords - AFC8562 MOSFET datasheet

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