All MOSFET. AFN02N60T251T Datasheet

 

AFN02N60T251T Datasheet and Replacement


   Type Designator: AFN02N60T251T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23.4 nS
   Cossⓘ - Output Capacitance: 35.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-251
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AFN02N60T251T Datasheet (PDF)

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AFN02N60T251T

AFN02N60 Alfa-MOS 600V / 2A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN02N60 is an N-channel enhancement mode Power 600V/1A,RDS(ON)=4.2(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

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History: AO4411 | WSD30L30DN | KO3402 | 2SK3280 | IPI47N10S-33 | IRF5NJ3315 | IRFZ48RS

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