All MOSFET. AFN07N65T220T Datasheet

 

AFN07N65T220T Datasheet and Replacement


   Type Designator: AFN07N65T220T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.5 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 98.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220
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AFN07N65T220T Datasheet (PDF)

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AFN07N65T220T

AFN07N65 Alfa-MOS 650V / 7A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN07N65 is an N-channel enhancement mode Power 650V/3.5A,RDS(ON)=1.4(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta

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