AFN07N65T220T Datasheet. Specs and Replacement
Type Designator: AFN07N65T220T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 98.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220
AFN07N65T220T substitution
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AFN07N65T220T datasheet
afn07n65t220ft afn07n65t220t.pdf
AFN07N65 Alfa-MOS 650V / 7A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN07N65 is an N-channel enhancement mode Power 650V/3.5A,RDS(ON)=1.4 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta... See More ⇒
Detailed specifications: AFN02N60T220T, AFN02N60T251T, AFN04N60T220FT, AFN04N60T220T, AFN04N60T251T, AFN06N60T220FT, AFN06N60T251T, AFN07N65T220FT, IRFZ24N, AFN08N50T220FT, AFN08N50T220T, AFN1012, AFN1012E, AFN1024, AFN1024E, AFN1032, AFN1034
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