AFN1932 Datasheet. Specs and Replacement
Type Designator: AFN1932 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: SOT-363
AFN1932 substitution
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AFN1932 datasheet
afn1932.pdf
AFN1932 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1932, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m @VGS=1.8V These devices are particularly suited for low L... See More ⇒
afn1912.pdf
AFN1912 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1912, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m @VGS=1.8V These devices are particularly suited for low L... See More ⇒
afn1912e.pdf
AFN1912E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1912E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m @VGS=1.8V These devices are particularly suited for low ... See More ⇒
Detailed specifications: AFN1330S, AFN1443, AFN1501S, AFN1510S, AFN1520, AFN1530, AFN1912, AFN1912E, IRF740, AFN2014, AFN2302AS, AFN2302S, AFN2304, AFN2304A, AFN2304AS, AFN2304S, AFN2306A
Keywords - AFN1932 MOSFET specs
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