AFN1932 Datasheet and Replacement. Cross Reference Search

AFN1932 Datasheet (PDF)

..1. Size:571K alfa-mos
afn1932.pdf pdf_icon

AFN1932 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1932, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m@VGS=1.8V These devices are particularly suited for low L

9.1. Size:597K alfa-mos
afn1912.pdf pdf_icon

AFN1912 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1912, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m@VGS=1.8V These devices are particularly suited for low L

9.2. Size:594K alfa-mos
afn1912e.pdf pdf_icon

AFN1912E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1912E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=580m@VGS=1.8V These devices are particularly suited for low

Datasheet: AFN1330S , AFN1443 , AFN1501S , AFN1510S , AFN1520 , AFN1530 , AFN1912 , AFN1912E , IRF740 , AFN2014 , AFN2302AS , AFN2302S , AFN2304 , AFN2304A , AFN2304AS , AFN2304S , AFN2306A .