AFN2014 Datasheet. Specs and Replacement
Type Designator: AFN2014 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 285 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-252
AFN2014 substitution
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AFN2014 datasheet
afn2014.pdf
AFN2014 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2014, N-Channel enhancement mode 20V/ 10A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 8A,RDS(ON)=17m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m @VGS=1.8V These devices are particularly suited for low Super ... See More ⇒
Detailed specifications: AFN1443, AFN1501S, AFN1510S, AFN1520, AFN1530, AFN1912, AFN1912E, AFN1932, IRF840, AFN2302AS, AFN2302S, AFN2304, AFN2304A, AFN2304AS, AFN2304S, AFN2306A, AFN2306AE
Keywords - AFN2014 MOSFET specs
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AFN2014 replacement
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