All MOSFET. AFN2014 Datasheet

 

AFN2014 Datasheet and Replacement


   Type Designator: AFN2014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-252
 

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AFN2014 Datasheet (PDF)

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AFN2014

AFN2014 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2014, N-Channel enhancement mode 20V/ 10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 8A,RDS(ON)=17m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m@VGS=1.8V These devices are particularly suited for low Super

Datasheet: AFN1443 , AFN1501S , AFN1510S , AFN1520 , AFN1530 , AFN1912 , AFN1912E , AFN1932 , IRF840 , AFN2302AS , AFN2302S , AFN2304 , AFN2304A , AFN2304AS , AFN2304S , AFN2306A , AFN2306AE .

History: AOY66620 | QS6K21 | NCEP090N85A | STL4P2UH7 | MTM78E2B0LBF | HAT2038R | HAT2020R

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