AFN2912W Datasheet. Specs and Replacement

Type Designator: AFN2912W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: DFN2X2-6L

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AFN2912W datasheet

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AFN2912W

AFN2912W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2912W, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.6A,RDS(ON)=60m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒

Detailed specifications: AFN2324, AFN2324A, AFN2330, AFN2330A, AFN2336A, AFN2354, AFN2376, AFN2604, IRFP250N, AFN3006S, AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S, AFN3030, AFN3302W

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