All MOSFET. AFN2912W Datasheet

 

AFN2912W Datasheet and Replacement


   Type Designator: AFN2912W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: DFN2X2-6L
 

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AFN2912W Datasheet (PDF)

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AFN2912W

AFN2912W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2912W, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.6A,RDS(ON)=60m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m@VGS=1.8V These devices are particularly suited for low Su

Datasheet: AFN2324 , AFN2324A , AFN2330 , AFN2330A , AFN2336A , AFN2354 , AFN2376 , AFN2604 , IRFP250N , AFN3006S , AFN3009S , AFN3015S , AFN3016S , AFN3019S , AFN3025S , AFN3030 , AFN3302W .

History: SSM6L35FE | CSD17570Q5B

Keywords - AFN2912W MOSFET datasheet

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