AFN3806W Datasheet. Specs and Replacement

Type Designator: AFN3806W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: DFN3X3

AFN3806W substitution

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AFN3806W datasheet

 ..1. Size:607K  alfa-mos
 afn3806w.pdf pdf_icon

AFN3806W

AFN3806W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3806W, N-Channel enhancement mode 20V/ 9A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 8A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 6A,RDS(ON)=42m @VGS=1.8V These devices are particularly suited for low Super... See More ⇒

 9.1. Size:622K  alfa-mos
 afn3814w.pdf pdf_icon

AFN3806W

AFN3814W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3814W, N-Channel enhancement mode 20V/ 14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 12A,RDS(ON)=18m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 10A,RDS(ON)=30m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒

Detailed specifications: AFN3460, AFN3466, AFN3484, AFN3484S, AFN3606S, AFN3609S, AFN3630, AFN3684S, P60NF06, AFN3814W, AFN4048WS, AFN4102W, AFN4134, AFN4134W, AFN4172S, AFN4172WS, AFN4210

Keywords - AFN3806W MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.