All MOSFET. AFN3806W Datasheet

 

AFN3806W Datasheet and Replacement


   Type Designator: AFN3806W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: DFN3X3
 

 AFN3806W substitution

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AFN3806W Datasheet (PDF)

 ..1. Size:607K  alfa-mos
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AFN3806W

AFN3806W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3806W, N-Channel enhancement mode 20V/ 9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 6A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Super

 9.1. Size:622K  alfa-mos
 afn3814w.pdf pdf_icon

AFN3806W

AFN3814W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3814W, N-Channel enhancement mode 20V/ 14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 10A,RDS(ON)=30m@VGS=1.8V These devices are particularly suited for low Su

Datasheet: AFN3460 , AFN3466 , AFN3484 , AFN3484S , AFN3606S , AFN3609S , AFN3630 , AFN3684S , AO3401 , AFN3814W , AFN4048WS , AFN4102W , AFN4134 , AFN4134W , AFN4172S , AFN4172WS , AFN4210 .

History: 2SK2673 | VS6038AD | LPSC3487 | TTD30P03AT | AO6801E | GSM3316W | TSM2611EDCX6

Keywords - AFN3806W MOSFET datasheet

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