All MOSFET. AFN3806W Datasheet

 

AFN3806W MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN3806W
   Marking Code: 3806W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.65 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: DFN3X3

 AFN3806W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN3806W Datasheet (PDF)

 ..1. Size:607K  alfa-mos
 afn3806w.pdf

AFN3806W AFN3806W

AFN3806W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3806W, N-Channel enhancement mode 20V/ 9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 6A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Super

 9.1. Size:622K  alfa-mos
 afn3814w.pdf

AFN3806W AFN3806W

AFN3814W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3814W, N-Channel enhancement mode 20V/ 14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 10A,RDS(ON)=30m@VGS=1.8V These devices are particularly suited for low Su

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GP1M015A050XX | FDS6900AS

 

 
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