AFN3814W Datasheet. Specs and Replacement
Type Designator: AFN3814W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 285 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN3X3
AFN3814W substitution
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AFN3814W datasheet
afn3814w.pdf
AFN3814W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3814W, N-Channel enhancement mode 20V/ 14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 12A,RDS(ON)=18m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 10A,RDS(ON)=30m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒
afn3806w.pdf
AFN3806W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3806W, N-Channel enhancement mode 20V/ 9A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 8A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 6A,RDS(ON)=42m @VGS=1.8V These devices are particularly suited for low Super... See More ⇒
Detailed specifications: AFN3466, AFN3484, AFN3484S, AFN3606S, AFN3609S, AFN3630, AFN3684S, AFN3806W, 75N75, AFN4048WS, AFN4102W, AFN4134, AFN4134W, AFN4172S, AFN4172WS, AFN4210, AFN4210W
Keywords - AFN3814W MOSFET specs
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