AFN4546 Datasheet and Replacement
Type Designator: AFN4546
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOP-8P
AFN4546 substitution
AFN4546 Datasheet (PDF)
afn4546.pdf

AFN4546 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4546, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/5.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
Datasheet: AFN4412 , AFN4412W , AFN4422 , AFN4424 , AFN4424W , AFN4440 , AFN4440W , AFN4486 , IRFP064N , AFN4634WS , AFN4804 , AFN4808W , AFN4822S , AFN4822WS , AFN4850WS , AFN4874WS , AFN4896 .
History: TK20J60W5 | NP80N055CHE
Keywords - AFN4546 MOSFET datasheet
AFN4546 cross reference
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History: TK20J60W5 | NP80N055CHE



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