All MOSFET. AFN5004S Datasheet

 

AFN5004S Datasheet and Replacement


   Type Designator: AFN5004S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-252
 

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AFN5004S Datasheet (PDF)

 ..1. Size:749K  alfa-mos
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AFN5004S

AFN5004S Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/15A,RDS(ON)= 6.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:523K  alfa-mos
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AFN5004S

AFN501DEA Alfa-MOS 600V N-Channel Technology Depletion Mode Power MOSFET General Description Features AFN501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700@VGS=10V Power MOSEFT which is produced using 600V/3mA,RDS(ON)=700@VGS=4.5V VDMOS technology. The improved planar stripe Depletion-mode ( Normally-on) cell have been especially tailored to minimize

Datasheet: AFN4936WS , AFN4946 , AFN4946BW , AFN4946W , AFN4996 , AFN4997 , AFN4998 , AFN4998W , IRFP250N , AFN501DEA , AFN5800 , AFN5800W , AFN5808W , AFN5904W , AFN5908W , AFN6011S , AFN6018S .

History: IRFSL3107PBF | AON6206

Keywords - AFN5004S MOSFET datasheet

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