AFN5004S Datasheet. Specs and Replacement

Type Designator: AFN5004S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-252

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AFN5004S datasheet

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AFN5004S

AFN5004S Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/15A,RDS(ON)= 6.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

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AFN5004S

AFN501DEA Alfa-MOS 600V N-Channel Technology Depletion Mode Power MOSFET General Description Features AFN501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700 @VGS=10V Power MOSEFT which is produced using 600V/3mA,RDS(ON)=700 @VGS=4.5V VDMOS technology. The improved planar stripe Depletion-mode ( Normally-on) cell have been especially tailored to minimize ... See More ⇒

Detailed specifications: AFN4936WS, AFN4946, AFN4946BW, AFN4946W, AFN4996, AFN4997, AFN4998, AFN4998W, IRFB4115, AFN501DEA, AFN5800, AFN5800W, AFN5808W, AFN5904W, AFN5908W, AFN6011S, AFN6018S

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