AFN5800 Datasheet. Specs and Replacement

Type Designator: AFN5800  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: DFN2X5

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AFN5800 datasheet

 ..1. Size:598K  alfa-mos
 afn5800.pdf pdf_icon

AFN5800

AFN5800 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800, N-Channel enhancement mode 20V/7.0A,RDS(ON)=23m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/6.0A,RDS(ON)=25m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.5A,RDS(ON)=28m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 0.1. Size:599K  alfa-mos
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AFN5800

AFN5800W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800W, N-Channel enhancement mode 20V/8.0A,RDS(ON)=19m @VGS=10V MOSFET, uses Advanced Trench Technology 20V/7.0A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/6.0A,RDS(ON)=24m @VGS=2.5V These devices are particularly suited for low 20V... See More ⇒

 8.1. Size:597K  alfa-mos
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AFN5800

AFN5808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=38m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒

Detailed specifications: AFN4946BW, AFN4946W, AFN4996, AFN4997, AFN4998, AFN4998W, AFN5004S, AFN501DEA, P55NF06, AFN5800W, AFN5808W, AFN5904W, AFN5908W, AFN6011S, AFN6018S, AFN6202S, AFN6424S

Keywords - AFN5800 MOSFET specs

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