All MOSFET. AFN6011S Datasheet

 

AFN6011S Datasheet and Replacement


   Type Designator: AFN6011S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO-220
 

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AFN6011S Datasheet (PDF)

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AFN6011S

AFN6011S Alfa-MOS 65V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6011S, N-Channel enhancement mode 65V/40A, RDS(on)= 7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 65V/20A, RDS(on)=10m@VGS=6.0V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited fo

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AFN6011S

AFN6018S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6018S, N-Channel enhancement mode 60V/25A,RDS(ON)= 17m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/15A,RDS(ON)= 37m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

Datasheet: AFN4998W , AFN5004S , AFN501DEA , AFN5800 , AFN5800W , AFN5808W , AFN5904W , AFN5908W , K3569 , AFN6018S , AFN6202S , AFN6424S , AFN6520S , AFN6530S , AFN6561 , AFN6562 , AFN6820 .

History: CSM350 | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | CM7N60F | AM2394NE | HCT70R1K1

Keywords - AFN6011S MOSFET datasheet

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