AFN6011S Datasheet. Specs and Replacement
Type Designator: AFN6011S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO-220
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AFN6011S datasheet
afn6011s.pdf
AFN6011S Alfa-MOS 65V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6011S, N-Channel enhancement mode 65V/40A, RDS(on)= 7.8m @VGS=10V MOSFET, uses Advanced Trench Technology to 65V/20A, RDS(on)=10m @VGS=6.0V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited fo... See More ⇒
afn6018s.pdf
AFN6018S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6018S, N-Channel enhancement mode 60V/25A,RDS(ON)= 17m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/15A,RDS(ON)= 37m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for ... See More ⇒
Detailed specifications: AFN4998W, AFN5004S, AFN501DEA, AFN5800, AFN5800W, AFN5808W, AFN5904W, AFN5908W, IRF9540, AFN6018S, AFN6202S, AFN6424S, AFN6520S, AFN6530S, AFN6561, AFN6562, AFN6820
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