All MOSFET. IRLSZ44A Datasheet

 

IRLSZ44A Datasheet and Replacement


   Type Designator: IRLSZ44A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO220F
 

 IRLSZ44A substitution

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IRLSZ44A Datasheet (PDF)

 ..1. Size:221K  samsung
irlsz44a.pdf pdf_icon

IRLSZ44A

IRLSZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute M

 9.1. Size:219K  samsung
irlsz34a.pdf pdf_icon

IRLSZ44A

IRLSZ34AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute

 9.2. Size:215K  samsung
irlsz14a.pdf pdf_icon

IRLSZ44A

IRLSZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolut

 9.3. Size:218K  samsung
irlsz24a.pdf pdf_icon

IRLSZ44A

IRLSZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.061 (Typ.)1231.Gate 2. Drain 3. SourceAbsolut

Datasheet: IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A , IRLSZ24A , IRLSZ34A , RU6888R , IRLU010 , IRLU014 , IRLU014A , IRLU020 , IRLU024 , IRLU024A , IRLU024N , IRLU110A .

History: STU10L01 | FDB024N04AL7 | BUK9528-55

Keywords - IRLSZ44A MOSFET datasheet

 IRLSZ44A cross reference
 IRLSZ44A equivalent finder
 IRLSZ44A lookup
 IRLSZ44A substitution
 IRLSZ44A replacement

 

 
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