AFN6202S Datasheet. Specs and Replacement
Type Designator: AFN6202S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DFN5X6
📄📄 Copy
AFN6202S substitution
- MOSFET ⓘ Cross-Reference Search
AFN6202S datasheet
afn6202s.pdf
AFN6202S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=7.0m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒
Detailed specifications: AFN501DEA, AFN5800, AFN5800W, AFN5808W, AFN5904W, AFN5908W, AFN6011S, AFN6018S, 2SK3878, AFN6424S, AFN6520S, AFN6530S, AFN6561, AFN6562, AFN6820, AFN6830, AFN7002AS
Keywords - AFN6202S MOSFET specs
AFN6202S cross reference
AFN6202S equivalent finder
AFN6202S pdf lookup
AFN6202S substitution
AFN6202S replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
