All MOSFET. AFN6202S Datasheet

 

AFN6202S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN6202S
   Marking Code: 6202S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6

 AFN6202S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN6202S Datasheet (PDF)

 ..1. Size:574K  alfa-mos
 afn6202s.pdf

AFN6202S AFN6202S

AFN6202S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=7.0m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP045N10 | STF12N50M2 | FDT457N | FSS275 | SL2309A | CJQ4435S

 

 
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