All MOSFET. AFN6202S Datasheet

 

AFN6202S Datasheet and Replacement


   Type Designator: AFN6202S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6
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AFN6202S Datasheet (PDF)

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AFN6202S

AFN6202S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=7.0m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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History: FQD4N25TM | 2SK3192

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