AFN6424S Datasheet. Specs and Replacement
Type Designator: AFN6424S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TSOP-6
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AFN6424S datasheet
afn6424s.pdf
AFN6424S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6424S, N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m @VGS=10.0V MOSFET, uses Advanced Trench Technology 30V/4.0A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒
Detailed specifications: AFN5800, AFN5800W, AFN5808W, AFN5904W, AFN5908W, AFN6011S, AFN6018S, AFN6202S, STP75NF75, AFN6520S, AFN6530S, AFN6561, AFN6562, AFN6820, AFN6830, AFN7002AS, AFN7002DS
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