All MOSFET. AFN6424S Datasheet

 

AFN6424S Datasheet and Replacement


   Type Designator: AFN6424S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TSOP-6
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AFN6424S Datasheet (PDF)

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AFN6424S

AFN6424S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6424S, N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m@VGS=10.0V MOSFET, uses Advanced Trench Technology 30V/4.0A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3456 | IPI47N10S-33 | SVF18N50F | TMP830Z | IRFZ48RS | 2SK2237 | WSD30L30DN

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