All MOSFET. AFN6424S Datasheet

 

AFN6424S Datasheet and Replacement


   Type Designator: AFN6424S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TSOP-6
 

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AFN6424S Datasheet (PDF)

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AFN6424S

AFN6424S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6424S, N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m@VGS=10.0V MOSFET, uses Advanced Trench Technology 30V/4.0A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

Datasheet: AFN5800 , AFN5800W , AFN5808W , AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S , SKD502T , AFN6520S , AFN6530S , AFN6561 , AFN6562 , AFN6820 , AFN6830 , AFN7002AS , AFN7002DS .

History: SI8100DB

Keywords - AFN6424S MOSFET datasheet

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