All MOSFET. AFN6820 Datasheet

 

AFN6820 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN6820
   Marking Code: 20*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.2 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TSOP-6

 AFN6820 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN6820 Datasheet (PDF)

 ..1. Size:583K  alfa-mos
 afn6820.pdf

AFN6820 AFN6820

AFN6820 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6820, N-Channel enhancement mode 20V/3.4A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.0A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

 9.1. Size:579K  alfa-mos
 afn6830.pdf

AFN6820 AFN6820

AFN6830 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6830, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V These devices are particularly suited for low Supe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SUD35N10-26P | IXTP32N20T

 

 
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