All MOSFET. AFN6830 Datasheet

 

AFN6830 Datasheet and Replacement


   Type Designator: AFN6830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TSOP-6
 

 AFN6830 substitution

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AFN6830 Datasheet (PDF)

 ..1. Size:579K  alfa-mos
 afn6830.pdf pdf_icon

AFN6830

AFN6830 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6830, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V These devices are particularly suited for low Supe

 9.1. Size:583K  alfa-mos
 afn6820.pdf pdf_icon

AFN6830

AFN6820 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6820, N-Channel enhancement mode 20V/3.4A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.0A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

Datasheet: AFN6018S , AFN6202S , AFN6424S , AFN6520S , AFN6530S , AFN6561 , AFN6562 , AFN6820 , 12N60 , AFN7002AS , AFN7002DS , AFN7002KAS , AFN7106S , AFN7400 , AFN7402 , AFN7412 , AFN7420 .

History: TPC50R250C | CSFR2N60D | HFP8N60S | MGSF1N02ELT1 | AO4314 | BL10N80-W | SL3406

Keywords - AFN6830 MOSFET datasheet

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