AFN6830 Datasheet. Specs and Replacement
Type Designator: AFN6830 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TSOP-6
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AFN6830 datasheet
afn6830.pdf
AFN6830 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6830, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m @VGS=2.5V These devices are particularly suited for low Supe... See More ⇒
afn6820.pdf
AFN6820 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6820, N-Channel enhancement mode 20V/3.4A,RDS(ON)=58m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.0A,RDS(ON)=68m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=88m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒
Detailed specifications: AFN6018S, AFN6202S, AFN6424S, AFN6520S, AFN6530S, AFN6561, AFN6562, AFN6820, K3569, AFN7002AS, AFN7002DS, AFN7002KAS, AFN7106S, AFN7400, AFN7402, AFN7412, AFN7420
Keywords - AFN6830 MOSFET specs
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