AFN7002AS MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN7002AS
Marking Code: 702W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.64 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT-23
AFN7002AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN7002AS Datasheet (PDF)
afn7002as.pdf
AFN7002AS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002AS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=3000m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=4000m@VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afn7002kas.pdf
AFN7002KAS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002KAS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=3.0@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afn7002ds.pdf
AFN7002DS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002DS, N-Channel enhancement mode 60V/0.5A,RDS(ON)=3000m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A,RDS(ON)=4000m@VGS=5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
