AFN7002AS Datasheet. Specs and Replacement

Type Designator: AFN7002AS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-23

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AFN7002AS datasheet

 ..1. Size:397K  alfa-mos
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AFN7002AS

AFN7002AS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002AS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=3000m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=4000m @VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒

 7.1. Size:736K  alfa-mos
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AFN7002AS

AFN7002KAS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002KAS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=3.0 @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒

 7.2. Size:538K  alfa-mos
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AFN7002AS

AFN7002DS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002DS, N-Channel enhancement mode 60V/0.5A,RDS(ON)=3000m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A,RDS(ON)=4000m @VGS=5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-V... See More ⇒

Detailed specifications: AFN6202S, AFN6424S, AFN6520S, AFN6530S, AFN6561, AFN6562, AFN6820, AFN6830, IRFP260, AFN7002DS, AFN7002KAS, AFN7106S, AFN7400, AFN7402, AFN7412, AFN7420, AFN7424S

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