All MOSFET. AFN7106S Datasheet

 

AFN7106S Datasheet and Replacement


   Type Designator: AFN7106S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: DFN3.3X3.3
 

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AFN7106S Datasheet (PDF)

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AFN7106S

AFN7106S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7106S, N-Channel enhancement mode 20V/20A,RDS(ON)=6.2m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/15A,RDS(ON)=8.4m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

Datasheet: AFN6530S , AFN6561 , AFN6562 , AFN6820 , AFN6830 , AFN7002AS , AFN7002DS , AFN7002KAS , IRF9540N , AFN7400 , AFN7402 , AFN7412 , AFN7420 , AFN7424S , AFN7472S , AFN8205 , AFN8411 .

History: TPB65R940C | AON7754 | 2SK416S | DH033N03E | BSO130N03MSG | HAT2057RA

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