AFN7106S Datasheet. Specs and Replacement
Type Designator: AFN7106S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: DFN3.3X3.3
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AFN7106S datasheet
afn7106s.pdf
AFN7106S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7106S, N-Channel enhancement mode 20V/20A,RDS(ON)=6.2m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/15A,RDS(ON)=8.4m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f... See More ⇒
Detailed specifications: AFN6530S, AFN6561, AFN6562, AFN6820, AFN6830, AFN7002AS, AFN7002DS, AFN7002KAS, SKD502T, AFN7400, AFN7402, AFN7412, AFN7420, AFN7424S, AFN7472S, AFN8205, AFN8411
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