All MOSFET. AFN8205 Datasheet

 

AFN8205 Datasheet and Replacement


   Type Designator: AFN8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TSOP-6
 

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AFN8205 Datasheet (PDF)

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AFN8205

AFN8205 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=37m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Super

Datasheet: AFN7002KAS , AFN7106S , AFN7400 , AFN7402 , AFN7412 , AFN7420 , AFN7424S , AFN7472S , IRF1407 , AFN8411 , AFN8412 , AFN8439 , AFN8471 , AFN8495 , AFN8816 , AFN8822 , AFN8822S .

History: HFP4N50 | SQJB70EP | IRFS7434PBF | STP13N95K3 | KI4503DY | NCE6003Y | STB40NF10LT4

Keywords - AFN8205 MOSFET datasheet

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