All MOSFET. AFN8205 Datasheet

 

AFN8205 Datasheet and Replacement


   Type Designator: AFN8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TSOP-6
      - MOSFET Cross-Reference Search

 

AFN8205 Datasheet (PDF)

 ..1. Size:566K  alfa-mos
 afn8205.pdf pdf_icon

AFN8205

AFN8205 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=37m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Super

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSM40T03GH | AON6794 | BUZ84 | CED05N8 | APT4065BN | IRLR024 | BL10N70-A

Keywords - AFN8205 MOSFET datasheet

 AFN8205 cross reference
 AFN8205 equivalent finder
 AFN8205 lookup
 AFN8205 substitution
 AFN8205 replacement

 

 
Back to Top

 


 
.