AFN8205 Datasheet. Specs and Replacement
Type Designator: AFN8205 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: TSOP-6
📄📄 Copy
AFN8205 substitution
- MOSFET ⓘ Cross-Reference Search
AFN8205 datasheet
afn8205.pdf
AFN8205 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=37m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Super ... See More ⇒
Detailed specifications: AFN7002KAS, AFN7106S, AFN7400, AFN7402, AFN7412, AFN7420, AFN7424S, AFN7472S, IRFB3607, AFN8411, AFN8412, AFN8439, AFN8471, AFN8495, AFN8816, AFN8822, AFN8822S
Keywords - AFN8205 MOSFET specs
AFN8205 cross reference
AFN8205 equivalent finder
AFN8205 pdf lookup
AFN8205 substitution
AFN8205 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
