All MOSFET. AFP1073 Datasheet

 

AFP1073 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFP1073
   Marking Code: X
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: SOT-723

 AFP1073 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP1073 Datasheet (PDF)

 ..1. Size:661K  alfa-mos
 afp1073.pdf

AFP1073 AFP1073

AFP1073 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1073, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are part

 9.1. Size:574K  alfa-mos
 afp1013.pdf

AFP1073 AFP1073

AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1013, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are particu

 9.2. Size:546K  alfa-mos
 afp1033.pdf

AFP1073 AFP1073

AFP1033 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1033, P-Channel enhancement mode -30V/-0.6A, RDS(ON)= 750 m@ VGS =-10V MOSFET, uses Advanced Trench Technology -30V/-0.3A, RDS(ON)= 950 m@ VGS =-4.5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for

 9.3. Size:598K  alfa-mos
 afp1023.pdf

AFP1073 AFP1073

AFP1023 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1023, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are part

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AOD466 | STK400 | AP2R403AGMT-HF | AM4432N | NP82N055CLE | IRFS4615 | AM3932NE

 

 
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