AFP1073 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AFP1073
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 0.27 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 20 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm
Тип корпуса: SOT-723
Аналог (замена) для AFP1073
AFP1073 Datasheet (PDF)
afp1073.pdf

AFP1073 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1073, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are part
afp1013.pdf

AFP1013 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1013, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are particu
afp1033.pdf

AFP1033 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1033, P-Channel enhancement mode -30V/-0.6A, RDS(ON)= 750 m@ VGS =-10V MOSFET, uses Advanced Trench Technology -30V/-0.3A, RDS(ON)= 950 m@ VGS =-4.5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for
afp1023.pdf

AFP1023 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1023, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 620 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.35A, RDS(ON)= 860 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1450 m@ VGS =-1.8V These devices are part
Другие MOSFET... AFN9972S , AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , RU6888R , AFP1303 , AFP1413 , AFP1433 , AFP1810 , AFP1913 , AFP2301 , AFP2301A , AFP2301AS .
History: KI1555DL | PHK12NQ03LT | AP85T03GJ-HF | 2SK544 | IPB60R120P7 | TPD65R380C | IRFI7536GPBF
History: KI1555DL | PHK12NQ03LT | AP85T03GJ-HF | 2SK544 | IPB60R120P7 | TPD65R380C | IRFI7536GPBF



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